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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.313ohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
16AN4144 RoHS | Each | 1+$6.500 10+$5.900 25+$5.550 50+$5.200 100+$4.750 More Pricing... | Single | N Channel | 12A | 1.2kV | 0.313ohm | TO-263 (D2PAK) | 7Pins | 18V | 3V | 85W | 175°C | MaxSiC Series | |||||
Each | 1+$8.530 10+$7.130 25+$6.770 50+$6.420 100+$6.060 | Single | N Channel | 10.5A | 1.2kV | 0.313ohm | TO-247AD | 3Pins | 20V | 3.1V | 56W | 150°C | MaxSiC Series | ||||||
Each | 1+$10.570 10+$8.000 25+$7.660 50+$7.310 100+$6.970 | Single | N Channel | 10.5A | 1.2kV | 0.313ohm | TO-247AD | 4Pins | 20V | 3.1V | 56W | 150°C | MaxSiC Series | ||||||
