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IRLL110TRPBF
Power MOSFET, N Channel, 100 V, 1.5 A, 0.54 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 40 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $0.665 |
| 5000+ | $0.641 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$1,662.50
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRLL110TRPBFCopy
Newark Part No.73W9404
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.5A
Drain Source On State Resistance0.54ohm
On Resistance Rds(on)0.54ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Power Dissipation Pd3.1W
Transistor Case StyleSOT-223
Gate Source Threshold Voltage Max1V
Power Dissipation3.1W
No. of Pins4Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The IRLL110TRPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Logic-level gate drive
- RDS (ON) Specified at VGS = 4 and 5V
- Surface-mount
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.54ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.1W
Gate Source Threshold Voltage Max
1V
No. of Pins
4Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
1.5A
On Resistance Rds(on)
0.54ohm
Rds(on) Test Voltage
5V
Transistor Case Style
SOT-223
Power Dissipation
3.1W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
