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499 In Stock
| Quantity | Price |
|---|---|
| 1+ | $3.150 |
| 10+ | $2.270 |
| 25+ | $2.130 |
| 50+ | $1.980 |
| 100+ | $1.840 |
| 500+ | $1.690 |
| 1000+ | $1.640 |
Price for:Each
Minimum: 1
Multiple: 1
$3.15
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFBG30PBF
Newark Part No.63J6702
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id3.1A
On Resistance Rds(on)5ohm
Drain Source On State Resistance5ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd125W
Transistor Case StyleTO-220
Gate Source Threshold Voltage Max4V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness.
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- 175°C Operating Temperature
Applications
Audio, Signal Processing, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
5ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
3.1A
Drain Source On State Resistance
5ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
Power Dissipation
125W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Alternatives for IRFBG30PBF
1 Product Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
