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2N5116
JFET Transistor, Junction Field Effect, 30 V, -25 mA, 4 V, TO-206AA, 3 Pin, 200 °C
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ManufacturerVISHAY
Manufacturer Part No2N5116
Newark Part No.13C1999
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part No2N5116
Newark Part No.13C1999
Technical Datasheet
Gate Source Breakdown Voltage Max30V
Breakdown Voltage Vbr30V
Zero Gate Voltage Drain Current Idss Min-5mA
Zero Gate Voltage Drain Current Max-25mA
Gate Source Cutoff Voltage Max4V
Transistor Case StyleTO-206AA
Transistor TypeJFET
No. of Pins3 Pin
Channel TypeP Channel
Operating Temperature Max200°C
Transistor MountingThrough Hole
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Gate Source Breakdown Voltage Max
30V
Zero Gate Voltage Drain Current Idss Min
-5mA
Gate Source Cutoff Voltage Max
4V
Transistor Type
JFET
Channel Type
P Channel
Transistor Mounting
Through Hole
Product Range
-
SVHC
To Be Advised
Breakdown Voltage Vbr
30V
Zero Gate Voltage Drain Current Max
-25mA
Transistor Case Style
TO-206AA
No. of Pins
3 Pin
Operating Temperature Max
200°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate