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STW56N60M2-4
Power MOSFET, N Channel, 600 V, 52 A, 0.045 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STW56N60M2-4Copy |
| Manufacturer Standard Lead Time | 19 weeks |
| Newark Part No. | 26AH0275 |
| Product Range | MDmesh M2 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | $10.530 |
| 10+ | $6.540 |
| 25+ | $6.420 |
| 50+ | $6.300 |
| 100+ | $6.180 |
| 250+ | $6.060 |
| 500+ | $5.930 |
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Product Information
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STW56N60M2-4Copy |
| Manufacturer Standard Lead Time | 19 weeks |
| Newark Part No. | 26AH0275 |
| Product Range | MDmesh M2 |
| Technical Datasheet | |
| Transistor Polarity | N Channel |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 600V |
| Continuous Drain Current Id | 52A |
| Drain Source On State Resistance | 0.045ohm |
| On Resistance Rds(on) | 0.045ohm |
| Transistor Case Style | TO-247 |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 3V |
| Power Dissipation | 350W |
| Power Dissipation Pd | 350W |
| No. of Pins | 4Pins |
| Operating Temperature Max | 150°C |
| Product Range | MDmesh M2 |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
STW56N60M2-4 is a N-channel, 600V, 45mohm typ, 52A MDmesh M2 Power MOSFET in a TO247-4 package. This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected
- Excellent switching performance thanks to the extra driving source pin
- Operating junction temperature of 150°C
Technical Specifications
| Transistor Polarity | N Channel |
|---|---|
| Drain Source Voltage Vds | 600V |
| Drain Source On State Resistance | 0.045ohm |
| Transistor Case Style | TO-247 |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 350W |
| No. of Pins | 4Pins |
| Product Range | MDmesh M2 |
| SVHC | No SVHC (25-Jun-2025) |
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 52A |
| On Resistance Rds(on) | 0.045ohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 3V |
| Power Dissipation Pd | 350W |
| Operating Temperature Max | 150°C |
| Qualification | - |
Technical Docs (1)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |