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STL4N80K5
MOSFET, N CH, 800V, 2.5A, POWERFLAT-8
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTL4N80K5
Newark Part No.45AC7617
Product RangeMDmesh K5
Your Part Number
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTL4N80K5
Newark Part No.45AC7617
Product RangeMDmesh K5
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id2.5A
On Resistance Rds(on)2.1ohm
Drain Source On State Resistance2.5ohm
Transistor Case StylePowerFLAT
Transistor MountingSurface Mount
Power Dissipation Pd38W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation38W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeMDmesh K5
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
STL4N80K5 is a very high voltage N-channel power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. applications include switching applications.
- Industry’s lowest RDS(on) x area, industry’s best figure of merit (FoM)
- Ultra-low gate charge, 100% avalanche tested, Zener protected
- 800V minimum drain-source breakdown voltage (VGS = 0, ID = 1mA, TC = 25°C)
- 2.5ohm maximum static drain-source on resistance (VGS = 10V, ID = 1.5A, TC = 25°C)
- 2.5A maximum source-drain current (TC = 25°C)
- 3 to 5V gate threshold voltage range (VDS = VGS, ID = 100µA, TC = 25°C)
- 175pF typical input capacitance (VDS = 100V, f = 1MHz, VGS = 0, TC = 25°C)
- 20pF typical output capacitance (VDS = 100V, f = 1MHz, VGS = 0, TC = 25°C)
- 10.5nC typical total gate charge (VDD = 640V, ID = 3A, VGS = 10V)
- PowerFLAT™ package, operating junction temperature range from -55 to 150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
800V
On Resistance Rds(on)
2.1ohm
Transistor Case Style
PowerFLAT
Power Dissipation Pd
38W
Gate Source Threshold Voltage Max
5V
No. of Pins
8Pins
Product Range
MDmesh K5
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
2.5A
Drain Source On State Resistance
2.5ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
38W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate