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STGW75H65DFB2-4

IGBT, 115 A, 1.55 V, 357 W, 650 V, TO-247, 4 Pins

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Manufacturer	STMICROELECTRONICS
Manufacturer Part No	STGW75H65DFB2-4Copy
Manufacturer Standard Lead Time	18 weeks
Newark Part No.	91AH9106
Product Range	HB2
Your Part Number
Technical Datasheet	Data Sheet See all Technical Docs

Available to Order

Manufacturer Standard Lead Time: 18 week(s)

Price for:Each

Minimum: 1

Multiple: 1

$10.05

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Manufacturer	STMICROELECTRONICS
Manufacturer Part No	STGW75H65DFB2-4Copy
Manufacturer Standard Lead Time	18 weeks
Newark Part No.	91AH9106
Product Range	HB2
Technical Datasheet	Data Sheet
DC Collector Current	115A
Continuous Collector Current	115A
Collector Emitter Saturation Voltage	1.55V
Collector Emitter Saturation Voltage Vce(on)	1.55V
Power Dissipation	357W
Power Dissipation Pd	357W
Collector Emitter Voltage V(br)ceo	650V
Collector Emitter Voltage Max	650V
Transistor Case Style	TO-247
No. of Pins	4Pins
Operating Temperature Max	175°C
Transistor Mounting	Through Hole
Product Range	HB2
SVHC	No SVHC (25-Jun-2025)

DC Collector Current	115A
Collector Emitter Saturation Voltage	1.55V
Power Dissipation	357W
Collector Emitter Voltage V(br)ceo	650V
Transistor Case Style	TO-247
Operating Temperature Max	175°C
Product Range	HB2

Continuous Collector Current	115A
Collector Emitter Saturation Voltage Vce(on)	1.55V
Power Dissipation Pd	357W
Collector Emitter Voltage Max	650V
No. of Pins	4Pins
Transistor Mounting	Through Hole
SVHC	No SVHC (25-Jun-2025)

Product Change Notice EN

STGW75H65DFB2-4 Data Sheet

US ECCN:	Unknown
EU ECCN:	Unknown
RoHS Compliant:	Yes RoHS
RoHS Phthalates Compliant:	Yes RoHS
SVHC:	No SVHC (25-Jun-2025)
Download Product Compliance Certificate	Product Compliance Certificate