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STD13NM60N
MOSFET, N-CH, 600V, 11A, TO-252
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD13NM60N
Newark Part No.
Re-Reel33X1194
Cut Tape33X1194
Your Part Number
Technical Datasheet
220 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $3.210 |
| 10+ | $2.360 |
| 25+ | $2.140 |
| 50+ | $1.940 |
| 100+ | $1.720 |
| 250+ | $1.620 |
| 500+ | $1.480 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD13NM60N
Newark Part No.
Re-Reel33X1194
Cut Tape33X1194
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id11A
On Resistance Rds(on)0.28ohm
Drain Source On State Resistance0.28ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd90W
Power Dissipation90W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Alternatives for STD13NM60N
6 Products Found
Product Overview
- 600V, 11A N-channel MDmesh™ II power MOSFET in 3 pin DPAK package
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Suitable for switching applications
- Suitable for the most demanding high efficiency converters
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.28ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
90W
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
11A
Drain Source On State Resistance
0.28ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
90W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate