Print Page
STB8NM60T4
Power MOSFET, N Channel, 650 V, 8 A, 0.9 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB8NM60T4Copy
Manufacturer Standard Lead Time14 weeks
Newark Part No.
Re-Reel99W9708
Cut Tape99W9708
Your Part Number
1,039 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $4.500 | $4.50 |
| Total Price | $4.50 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $4.500 |
| 10+ | $1.800 |
| 50+ | $1.790 |
| 500+ | $1.780 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB8NM60T4Copy
Manufacturer Standard Lead Time14 weeks
Newark Part No.
Re-Reel99W9708
Cut Tape99W9708
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id8A
On Resistance Rds(on)0.9ohm
Drain Source On State Resistance0.9ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd100W
Gate Source Threshold Voltage Max4V
Power Dissipation100W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STB8NM60T4 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company's PowerMESH™ horizontal layout. The resulting product has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
- 100% Avalanche tested
- High dV/dt and avalanche capabilities
- Low gate input resistance
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.9ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
8A
Drain Source On State Resistance
0.9ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
100W
Power Dissipation
100W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate