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SCT012H90G3AG
Silicon Carbide MOSFET, Single, N Channel, 110 A, 900 V, 0.0158 ohm, H2PAK
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT012H90G3AG
Newark Part No.
Re-Reel04AM0269
Cut Tape04AM0269
Your Part Number
47 In Stock
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Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $23.950 |
| 10+ | $17.300 |
| 25+ | $17.280 |
| 50+ | $17.270 |
| 100+ | $17.250 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT012H90G3AG
Newark Part No.
Re-Reel04AM0269
Cut Tape04AM0269
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id110A
Drain Source Voltage Vds900V
Drain Source On State Resistance0.0158ohm
Transistor Case StyleH2PAK
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation625W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
110A
Drain Source On State Resistance
0.0158ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
900V
Transistor Case Style
H2PAK
Rds(on) Test Voltage
18V
Power Dissipation
625W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability