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2SB772
Bipolar (BJT) Single Transistor, PNP, 30 V, 3 A, 12.5 W, SOT-32, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part No2SB772
Newark Part No.38M2093
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part No2SB772
Newark Part No.38M2093
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo30V
Collector Emitter Voltage Max30V
Continuous Collector Current3A
DC Collector Current3A
Power Dissipation Pd12.5W
Power Dissipation12.5W
DC Current Gain hFE100hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleSOT-32
Transition Frequency100MHz
Operating Temperature Max-
DC Current Gain hFE Min100hFE
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
30V
DC Collector Current
3A
Power Dissipation
12.5W
Transistor Mounting
Through Hole
Transistor Case Style
SOT-32
Operating Temperature Max
-
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
30V
Continuous Collector Current
3A
Power Dissipation Pd
12.5W
DC Current Gain hFE
100hFE
No. of Pins
3Pins
Transition Frequency
100MHz
DC Current Gain hFE Min
100hFE
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate