1,000 Você pode reservar estoque agora
| Quantidade | Preço |
|---|---|
| 1+ | $ 3.500 |
| 10+ | $ 3.240 |
| 25+ | $ 3.110 |
| 50+ | $ 3.050 |
| 100+ | $ 2.980 |
Informação do produto
Descrição geral do produto
The OP830SL is a Silicon NPN Phototransistor mounted in a hermetically sealed package that offers high power dissipation and superior hostile environment operation. The OP830SL device has a narrow receiving angle that provides excellent on-axis coupling and a bonded base lead that enables conventional transistor biasing. Photodarlington device is normally used in applications where light signal levels are low and more current gain is needed than is possible with phototransistors. Device is 100% production tested using an infrared light source for close correlation with OPTEK's GaAs and GaAIAs emitters.
- Narrow receiving angle
- Enhanced temperature range
- Excellent thermal characteristics
- Mechanically and spectrally matched to the OP130 and OP231 series of infrared emitting diodes
Aplicações
Sensing & Instrumentation, Portable Devices, Industrial
Especificações Técnicas
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250mW
TO-18
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No SVHC (27-Jun-2024)
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3Pins
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Documentação técnica (2)
Legislação e Ambiente
RoHS
RoHS
Certificado de conformidade do produto