Precisa de mais?
| Quantidade | Preço |
|---|---|
| 1+ | $ 7.45 |
| 10+ | $ 5.75 |
| 25+ | $ 5.31 |
| 50+ | $ 5.09 |
| 100+ | $ 4.85 |
| 250+ | $ 4.74 |
| 520+ | $ 4.62 |
Informação do produto
Descrição geral do produto
MASTERGAN5 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors. The integrated GaN power transistors have 650 V drain‑source blocking voltage and RDS(ON) of 450 mΩ, while the high-side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN5 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The MASTERGAN5 operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package.
- Reverse current capability
- Zero reverse recovery loss
- Accurate internal timing match
- 3.3V to 15V compatible inputs with hysteresis and pull-down
- Over temperature protection
- Bill of material reduction
- Very compact and simplified layout
- Flexible, easy and fast design
Especificações Técnicas
4.75V
-
Half Bridge
-
QFN
31Pins
QFN-EP
-
-
3.3V
-40°C
-
-
MSL 3 - 168 hours
No SVHC (25-Jun-2025)
2Channels
9.5V
4A
GaN HEMT
-
QFN
Surface Mount
Logic
-
15V
125°C
-
-
-
Documentação técnica (2)
Legislação e Ambiente
RoHS
RoHS
Certificado de conformidade do produto