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| Quantidade | Preço |
|---|---|
| 1+ | $ 12.060 |
| 10+ | $ 11.220 |
| 25+ | $ 10.890 |
| 50+ | $ 10.630 |
| 100+ | $ 10.380 |
| 250+ | $ 10.050 |
| 500+ | $ 9.790 |
Informação do produto
Descrição geral do produto
MT46V32M16P-5B IT:J is a double data rate (DDR) SDRAM. The DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR SDRAM effectively consists of a single 2n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and two corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. The DDR SDRAM provides programmable READ or WRITE burst lengths of 2, 4, or 8 locations. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access.
- Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
- Differential clock inputs (CK and CK#), commands entered on each positive CK edge
- DQS edge-aligned with data for READs; center aligned with data for WRITEs
- DLL to align DQ and DQS transitions with CK, four internal banks for concurrent operation
- Auto refresh – 64ms, 8192-cycle
- Longer-lead TSOP for improved reliability (OCPL)
- 2.5V I/O (SSTL-2 compatible), concurrent auto precharge option is supported
- 32 Meg x 16 configuration, timing – cycle time: 5ns at CL = 3 (DDR400)
- 400-mil TSOP package
- Industrial temperature range from -40°C to 85°C
Especificações Técnicas
DDR
512Mbit
32M x 16bit
200MHz
TSOP
2.6V
5ns
85°C
No SVHC (17-Jan-2023)
512Mbit
32M x 16bit
200MHz
TSOP
66Pins
Surface Mount
-40°C
-
Documentação técnica (1)
Legislação e Ambiente
RoHS
RoHS
Certificado de conformidade do produto