MT16KTF1G64HZ-1G9P1

MT16KTF1G64HZ-1G9P1 is a 1.35V DDR3L SDRAM SODIMM memory module. This module is a high-speed, CMOS dynamic random access memory module that uses an internally configured 8-bank DDR3 SDRAM device. DDR3 SDRAM module uses DDR architecture to achieve high-speed operation. DDR3 architecture is essentially an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM module effectively consists of a single 8n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. DDR3 module uses two sets of differential signals: DQS, DQS# to capture data, and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals.

• 8GB module density, 1 Gig x 64 configuration, 14.9GB/s module bandwidth
• 13-13-13 clock cycles (CL-tRCD-tRP), PC3-14900 industry nomenclature, 8K refresh count
• 8 BA[2:0] device bank address, 4Gb (512 Meg x8) device configuration
• 1K A[9:0] column address, 2 S#[1:0] module rank address
• Fast data transfer rates: PC3-14900, PC3-12800, or PC3-10600, dual rank
• VDD = 1.35V (1.283V–1.45V), VDD = 1.5V (1.425–1.575V)
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Gold edge contacts, fly-by topology, terminated control, command, and address bus
• 204-pin DIMM package, commercial operating temperature range from 0°C to +70°C