CY7C1071DV33-12BAXI

CY7C1071DV33-12BAXI is a 32Mbit (2M × 16) static RAM. It is a high-performance CMOS Static RAM organized as 2,097,152 words by 16 bits. The input and output pins (I/O0 through I/O15) are placed in a high impedance state when deselected (CE HIGH), outputs are disabled (OE HIGH), both byte high enable and byte low enable are disabled (BHE, BLE HIGH), the write operation is active (CE LOW and WE LOW). To write to the device, take Chip Enable (CE active high) and Write Enable (WE active high) inputs LOW. If Byte Low Enable (BLE active high) is LOW, then data from I/O pins (I/O0 through I/O7) is written into the location specified on the address pins (A0 through A20). If Byte High Enable (BHE active high) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A20).

• 32Mbit density, data width × 16bits, C9, 90nm technology
• Voltage range from 3V to 3.6V, 12ns speed
• Automatic power down when deselected
• TTL compatible inputs and outputs
• 16pF maximum input capacitance (TA = 25°C, f = 1MHz, VCC = 3.3V)
• 2V minimum VCC for data retention
• Input leakage current range from -1 to +1µA
• Output leakage current range from -1 to +1µA
• 24.72°C/W thermal resistance (junction to ambient)
• 48-ball FBGA package, industrial ambient temperature range from -40 to +85°C