EV1320QI

EV1320QI is a 2A source/sink DDR memory termination converter. It is a DC to DC converter specifically designed for memory termination applications. This device offers high efficiency, up to 96%, while providing a solution footprint similar to that of a linear termination device. This device is designed to operate directly from the VDDQ supply rail. No external divider or reference is required. It provides a very stable output voltage (VTT) which tracks VDDQ while sinking and sourcing up to 2A of continuous output current. Upto 4 EV1320QI devices can be paralleled to source up to 8A of current. An ENABLE pin with output discharge is available for S3 (suspend to RAM) states. It is specifically designed to meet the precise voltage, and fast transient requirements of present and future high-performance, DDR2, DDR3, and low-power DDR4 JEDEC VTT requirements. It is used in applications such as VTT bus termination for DDR2, DDR3, low-power DDR4, and QDR memories.

• High efficiency, up to 96%, no external inductor required
• JEDEC compliant DDR2/3/QDR and low power DDR 4 solution
• Enable pin with output discharge to support S3 (suspend to RAM) mode
• Operates directly from VDDQ, VOUT (VTT) voltage tracks VDDQ/2 ±40mV
• Source and sink up to 2A continuous current, cost effective integrated solution
• Parallel up to 4 devices for 8A VTT current, programmable soft start/soft shutdown
• Thermal overload, over current, short circuit, and under-voltage protection
• AVIN shut-down supply current is 600μA max at (AVIN = 3.3V; VDDQ = 1.5V, TA = 25°C)
• Output impedance is 20Mohm typical at (AVIN = 3.3V; VDDQ = 1.5V, TA = 25°C)
• Operating ambient temperature range from -40°C +85°C and 16-UFQFN Exposed Pad package