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NVH4L025N065SC1
Silicon Carbide MOSFET, N Channel, 99 A, 650 V, 0.0285 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNVH4L025N065SC1
Newark Part No.57AK6424
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $25.350 |
| 5+ | $22.930 |
| 10+ | $20.510 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVH4L025N065SC1
Newark Part No.57AK6424
Technical Datasheet
MOSFET Module Configuration-
Channel TypeN Channel
Continuous Drain Current Id99A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.0285ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.3V
Power Dissipation348W
Operating Temperature Max175°C
Product Range-
SVHCLead
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Technical Specifications
MOSFET Module Configuration
-
Continuous Drain Current Id
99A
Drain Source On State Resistance
0.0285ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
348W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
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