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NTZD3155CT1G.
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 540 mA, 430 mA, 0.55 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTZD3155CT1G.
Newark Part No.26AC2771
Your Part Number
Technical Datasheet
8,000 In Stock
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| Quantity | Price |
|---|---|
| 3000+ | $0.168 |
| 6000+ | $0.152 |
| 12000+ | $0.139 |
| 18000+ | $0.131 |
| 30000+ | $0.122 |
Price for:Each (Supplied on Full Reel)
Minimum: 4000
Multiple: 4000
$672.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTZD3155CT1G.
Newark Part No.26AC2771
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id540mA
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel540mA
Continuous Drain Current Id P Channel430mA
Drain Source On State Resistance N Channel550mohm
Drain Source On State Resistance P Channel900mohm
Transistor Case StyleSOT-563
No. of Pins6Pins
Power Dissipation N Channel250mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (19-Jan-2021)
Product Overview
The NTZD3155CT1G is a N/P-channel complementary Small Signal MOSFET designed for cell phones, MP3s, digital cameras and PDAs. It is suitable for DC-to-DC conversion circuits, load/power switching with level shift, single or dual cell Li-Ion battery operated systems and high speed circuit applications.
- Leading Trench technology for low RDS (ON) performance
- High efficiency system performance
- Low threshold voltage
- ESD protected gate
- Small footprint
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
430mA
Drain Source On State Resistance P Channel
900mohm
No. of Pins
6Pins
Power Dissipation P Channel
-
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
540mA
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
540mA
Drain Source On State Resistance N Channel
550mohm
Transistor Case Style
SOT-563
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate