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NCV8402ASTT3G
Power MOSFET, N Channel, 42 V, 2.37 A, 0.165 ohm, SOT-223, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoNCV8402ASTT3GCopy
Manufacturer Standard Lead Time17 weeks
Newark Part No.
Full Reel07W7279
Cut Tape13AC6171
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 4000 | $0.483 | $1,932.00 |
| Total Price | $1,932.00 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 4000+ | $0.483 |
Full Reel
| Quantity | Price |
|---|---|
| 4000+ | $0.371 |
| 12000+ | $0.362 |
| 20000+ | $0.355 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNCV8402ASTT3GCopy
Manufacturer Standard Lead Time17 weeks
Newark Part No.
Full Reel07W7279
Cut Tape13AC6171
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds42V
Continuous Drain Current Id2.37A
Drain Source On State Resistance0.165ohm
On Resistance Rds(on)0.165ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.1W
Transistor Case StyleSOT-223
Gate Source Threshold Voltage Max1.8V
Power Dissipation1.1W
No. of Pins4Pins
Operating Temperature Max150°C
QualificationAEC-Q100
Product Range-
Automotive Qualification StandardAEC-Q100
MSL-
SVHCLead (14-Jun-2023)
Product Overview
NCV8402ASTT3G is a three-terminal protected low−side smart discrete device. The protection features include overcurrent, overtemperature, ESD and integrated drain−to−gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. The application includes switch a variety of resistive, inductive and capacitive loads, can replace electromechanical relays and discrete circuits, automotive/industrial.
- Short−circuit protection, thermal shutdown with automatic restart
- Overvoltage protection, integrated clamp for inductive switching
- ESD protection, dV/dt robustness, analog drive capability (logic level input)
- AEC-Q101 qualified and PPAP capable, gate input current is 50µA typ at (VDS = 0V, VGS = 5V)
- Slew−rate ON (70% to 50% VDD) is 0.8µVs typ at (VGS = 10V, VDD = 12V, ID = 2.5A, RL = 4.7 ohm)
- Current limit is 4.3A typical at (VDS = 10V, VGS = 5.0V, TJ = 25°C)
- Source−drain forward on voltage is 1V typ at (VGS = 0V, IS = 7A)
- Gate threshold temperature coefficient 4mV/°C typical at (TJ = 25°C)
- Operating junction temperature range from -40°C to +150°C
- SOT−223 package
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
42V
Drain Source On State Resistance
0.165ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.1W
Gate Source Threshold Voltage Max
1.8V
No. of Pins
4Pins
Qualification
AEC-Q100
Automotive Qualification Standard
AEC-Q100
SVHC
Lead (14-Jun-2023)
Transistor Polarity
N Channel
Continuous Drain Current Id
2.37A
On Resistance Rds(on)
0.165ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-223
Power Dissipation
1.1W
Operating Temperature Max
150°C
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (14-Jun-2023)
Download Product Compliance Certificate
Product Compliance Certificate
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