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MMSF3P02HDR2G
Power MOSFET, P Channel, 20 V, 5.6 A, 0.06 ohm, SOIC, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 101 week(s)
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMSF3P02HDR2G
Newark Part No.61K0970
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id5.6A
On Resistance Rds(on)0.06ohm
Drain Source On State Resistance0.06ohm
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.5V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.06ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
5.6A
Drain Source On State Resistance
0.06ohm
Power Dissipation Pd
2.5W
Transistor Case Style
SOIC
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
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Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate