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HGTG30N60A4
IGBT, General Purpose, 75 A, 1.8 V, 463 W, 600 V, TO-247, 3 Pins
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ManufacturerONSEMI
Manufacturer Part NoHGTG30N60A4
Newark Part No.60K5972
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoHGTG30N60A4
Newark Part No.60K5972
Technical Datasheet
Continuous Collector Current75A
DC Collector Current75A
Collector Emitter Saturation Voltage Vce(on)1.8V
Collector Emitter Saturation Voltage1.8V
Power Dissipation Pd463W
Power Dissipation463W
Collector Emitter Voltage Max600V
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (19-Jan-2021)
Product Overview
The HGTG30N60A4 is a SMPS IGBT combines the best features of high input impedance of a MOSFET and low on state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications.
- Low saturation voltage
- Low conduction losses due to low on-state resistance
- 58ns fall time at 125°C junction temperature
Applications
Power Management, Industrial
Technical Specifications
Continuous Collector Current
75A
Collector Emitter Saturation Voltage Vce(on)
1.8V
Power Dissipation Pd
463W
Collector Emitter Voltage Max
600V
Transistor Case Style
TO-247
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (19-Jan-2021)
DC Collector Current
75A
Collector Emitter Saturation Voltage
1.8V
Power Dissipation
463W
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65