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HGTD1N120BNS9A
IGBT, 5.3 A, 2.5 V, 60 W, 1.2 kV, TO-252AA, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoHGTD1N120BNS9ACopy
Manufacturer Standard Lead Time13 weeks
Newark Part No.82C5178
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 13 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $0.841 |
| 5000+ | $0.805 |
| 7500+ | $0.789 |
| 12500+ | $0.773 |
| 25000+ | $0.757 |
| 62500+ | $0.741 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$2,102.50
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoHGTD1N120BNS9ACopy
Manufacturer Standard Lead Time13 weeks
Newark Part No.82C5178
Technical Datasheet
DC Collector Current5.3A
Continuous Collector Current5.3A
Collector Emitter Saturation Voltage2.5V
Collector Emitter Saturation Voltage Vce(on)2.5V
Power Dissipation Pd60W
Power Dissipation60W
Collector Emitter Voltage Max1.2kV
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleTO-252AA
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingSurface Mount
Product Range-
SVHCLead (25-Jun-2025)
Product Overview
The HGTD1N120BNS9A is a N-channel Non-punch Through (NPT) IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS and solar inverter. It is new member of the MOS gated high voltage switching IGBT family. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor.
- Short-circuit rating
- Avalanche rated
- 2.5V @ IC = 1A Low saturation voltage
- 258ns Fall time @ TJ = 150°C
- 298W Total power dissipation @ TC = 25°C
Applications
Power Management, Motor Drive & Control
Technical Specifications
DC Collector Current
5.3A
Collector Emitter Saturation Voltage
2.5V
Power Dissipation Pd
60W
Collector Emitter Voltage Max
1.2kV
Transistor Case Style
TO-252AA
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead (25-Jun-2025)
Continuous Collector Current
5.3A
Collector Emitter Saturation Voltage Vce(on)
2.5V
Power Dissipation
60W
Collector Emitter Voltage V(br)ceo
1.2kV
No. of Pins
3Pins
Transistor Mounting
Surface Mount
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate