Print Page
FQB34N20LTM
Power MOSFET, N Channel, 200 V, 31 A, 0.075 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 10 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.860 |
| 3000+ | $2.730 |
| 6000+ | $2.630 |
| 12000+ | $2.440 |
| 18000+ | $2.370 |
| 30000+ | $2.310 |
Price for:Each (Supplied on Full Reel)
Minimum: 800
Multiple: 800
$2,288.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB34N20LTM
Newark Part No.34C0404
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id31A
Drain Source On State Resistance0.075ohm
On Resistance Rds(on)0.075ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd180W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation180W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FQB34N20LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low level gate drive requirement allowing direct operation from logic drivers
- 100% avalanche tested
- 55nC typical low gate charge
- 52pF typical low Crss
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.075ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
180W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
31A
On Resistance Rds(on)
0.075ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
180W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Alternatives for FQB34N20LTM
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate