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Product Information
ManufacturerONSEMI
Manufacturer Part NoFGA15N120ANTDTU-F109
Newark Part No.31Y1431
Technical Datasheet
DC Collector Current30A
Continuous Collector Current30A
Collector Emitter Saturation Voltage Vce(on)2.3V
Collector Emitter Saturation Voltage2.3V
Power Dissipation186W
Power Dissipation Pd186W
Collector Emitter Voltage Max1.2kV
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCLead (19-Jan-2021)
Product Overview
The FGA15N120ANTDTU_F109 is a 1200V NPT Trench IGBT. It is in a non-punch through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Optimized manufacturing process results in better control and repeatability This product is general usage and suitable for many different applications.
- Low saturation voltage
- Low switching loss
- Extremely enhanced avalanche capability
Technical Specifications
DC Collector Current
30A
Collector Emitter Saturation Voltage Vce(on)
2.3V
Power Dissipation
186W
Collector Emitter Voltage Max
1.2kV
Transistor Case Style
TO-3P
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead (19-Jan-2021)
Continuous Collector Current
30A
Collector Emitter Saturation Voltage
2.3V
Power Dissipation Pd
186W
Collector Emitter Voltage V(br)ceo
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate