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FDZ191P
Power MOSFET, P Channel, 20 V, 3 A, 85 mohm, WL-CSP, Surface Mount
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDZ191P
Newark Part No.20M1190
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3A
On Resistance Rds(on)0.067ohm
Drain Source On State Resistance85mohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.9W
Transistor Case StyleWL-CSP
Gate Source Threshold Voltage Max600mV
Power Dissipation1.9W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (08-Jul-2021)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.067ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.9W
Gate Source Threshold Voltage Max
600mV
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
3A
Drain Source On State Resistance
85mohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
WL-CSP
Power Dissipation
1.9W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (08-Jul-2021)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate