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FDT86113LZ
Power MOSFET, N Channel, 100 V, 3.3 A, 0.1 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDT86113LZCopy |
| Manufacturer Standard Lead Time | 19 weeks |
| Newark Part No. | Full Reel87AK5580 Re-Reel88T3370RL Cut Tape88T3370 |
| Your Part Number | |
| Technical Datasheet |
3 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.440 | $1.44 |
| Total Price | $1.44 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.440 |
| 50+ | $0.683 |
| 100+ | $0.609 |
| 250+ | $0.544 |
| 500+ | $0.478 |
| 1000+ | $0.468 |
| 2500+ | $0.459 |
| 5000+ | $0.449 |
Full Reel
| Quantity | Price |
|---|---|
| 4000+ | $0.690 |
| 8000+ | $0.668 |
| 12000+ | $0.621 |
| 20000+ | $0.574 |
| 40000+ | $0.559 |
| 100000+ | $0.549 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDT86113LZCopy |
| Manufacturer Standard Lead Time | 19 weeks |
| Newark Part No. | Full Reel87AK5580 Re-Reel88T3370RL Cut Tape88T3370 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 100V |
| Continuous Drain Current Id | 3.3A |
| Drain Source On State Resistance | 0.1ohm |
| On Resistance Rds(on) | 0.075ohm |
| Transistor Case Style | SOT-223 |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 2.2W |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 1.7V |
| Power Dissipation | 2.2W |
| No. of Pins | 4Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | Lead (25-Jun-2025) |
Product Overview
The FDT86113LZ is a N-channel Logic Level MOSFET produced using advanced PowerTrench® process. It has been special tailored to minimize the ON-state resistance and yet maintain superior switching performance. The G-S Zener has been added to enhance ESD voltage level.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- 100% UIL tested
- <gt/>3KV typical HBM ESD protection level
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 3.3A |
| On Resistance Rds(on) | 0.075ohm |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 2.2W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | Lead (25-Jun-2025) |
| Drain Source Voltage Vds | 100V |
|---|---|
| Drain Source On State Resistance | 0.1ohm |
| Transistor Case Style | SOT-223 |
| Power Dissipation Pd | 2.2W |
| Gate Source Threshold Voltage Max | 1.7V |
| No. of Pins | 4Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (3)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | Lead (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |