Print Page
FDT457N
Power MOSFET, N Channel, 30 V, 5 A, 0.06 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDT457N
Newark Part No.85W3156
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 36 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.470 |
| 6000+ | $0.437 |
| 12000+ | $0.405 |
| 18000+ | $0.394 |
| 30000+ | $0.388 |
Price for:Each (Supplied on Full Reel)
Minimum: 4000
Multiple: 4000
$1,880.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDT457N
Newark Part No.85W3156
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5A
On Resistance Rds(on)0.043ohm
Drain Source On State Resistance0.06ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd3W
Transistor Case StyleSOT-223
Gate Source Threshold Voltage Max3V
Power Dissipation3W
No. of Pins4Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FDT457N is a 30V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. It is well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits and DC motor control. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- ±20V continuous gate source voltage (VGSS)
- 42°C/W Thermal resistance, junction to ambient
- 12°C/W thermal resistance, junction to case
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.043ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3W
Gate Source Threshold Voltage Max
3V
No. of Pins
4Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
5A
Drain Source On State Resistance
0.06ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-223
Power Dissipation
3W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Alternatives for FDT457N
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65