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FDS9958
Dual MOSFET, P Channel, 60 V, 60 V, 2.9 A, 2.9 A, 0.082 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDS9958
Newark Part No.78M0965
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 19 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.686 |
| 3000+ | $0.665 |
| 6000+ | $0.619 |
| 12000+ | $0.574 |
| 18000+ | $0.559 |
| 30000+ | $0.550 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$1,715.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS9958
Newark Part No.78M0965
Technical Datasheet
Channel TypeP Channel
Continuous Drain Current Id2.9A
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id N Channel2.9A
Continuous Drain Current Id P Channel2.9A
Drain Source On State Resistance N Channel0.082ohm
Drain Source On State Resistance P Channel0.082ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDS9958 is a PowerTrench® dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. This device is well suited for portable electronics applications like load switching and power management, battery charging and protection circuits.
- ±20V Gate to source voltage
- -2.9A Continuous drain current
- -12A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds
60V
Continuous Drain Current Id P Channel
2.9A
Drain Source On State Resistance P Channel
0.082ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
2.9A
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
2.9A
Drain Source On State Resistance N Channel
0.082ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate