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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6612ACopy
Newark Part No.78K5938
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id8.4A
On Resistance Rds(on)0.019ohm
Drain Source On State Resistance0.022ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.5W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.9V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (17-Jan-2022)
Alternatives for FDS6612A
1 Product Found
Product Overview
The FDS6612A is a single N-channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Fast switching speed
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.019ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
1.9V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
8.4A
Drain Source On State Resistance
0.022ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (17-Jan-2022)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate
