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FDD7N20TM
Power MOSFET, N Channel, 200 V, 5 A, 0.69 ohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDD7N20TMCopy
Manufacturer Standard Lead Time35 weeks
Newark Part No.
Full Reel52M3161
Full Reel86AK4931
Re-Reel31Y1361RL
Cut Tape31Y1361
Your Part Number
1,887 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $1.440 | $7.20 |
| Total Price | $7.20 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $1.440 |
| 50+ | $0.946 |
| 100+ | $0.660 |
| 250+ | $0.599 |
| 500+ | $0.537 |
| 1000+ | $0.497 |
| 2500+ | $0.430 |
| 5000+ | $0.421 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.440 |
| 3000+ | $0.462 |
| 6000+ | $0.434 |
| 7500+ | $0.416 |
| 12000+ | $0.413 |
| 12500+ | $0.408 |
| 18000+ | $0.391 |
| 30000+ | $0.378 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD7N20TMCopy
Manufacturer Standard Lead Time35 weeks
Newark Part No.
Full Reel52M3161
Full Reel86AK4931
Re-Reel31Y1361RL
Cut Tape31Y1361
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id5A
Drain Source On State Resistance0.69ohm
On Resistance Rds(on)0.58ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Power Dissipation Pd43W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation43W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The FDD7N20TM is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 100% avalanche tested
- 5nC Typical low gate charge
- 5pF typical low Crss
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.69ohm
Transistor Case Style
TO-252AA
Power Dissipation Pd
43W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
5A
On Resistance Rds(on)
0.58ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
43W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (3)
Alternatives for FDD7N20TM
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate