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FDC637AN
Power MOSFET, N Channel, 20 V, 6.2 A, 0.024 ohm, SuperSOT, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC637AN
Newark Part No.67R2038
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 1 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.434 |
| 6000+ | $0.409 |
| 12000+ | $0.389 |
| 18000+ | $0.370 |
| 30000+ | $0.358 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$1,302.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC637AN
Newark Part No.67R2038
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id6.2A
Drain Source On State Resistance0.024ohm
On Resistance Rds(on)0.024ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.6W
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max820mV
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC637AN is a 2.5V specified single N-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. It is suitable for use in DC-to-DC converter, load switching and battery protection applications.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- 10.5nC Typical low gate charge
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.6W
Gate Source Threshold Voltage Max
820mV
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
6.2A
On Resistance Rds(on)
0.024ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SuperSOT
Power Dissipation
1.6W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for FDC637AN
3 Products Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate