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FDC5612
Power MOSFET, N Channel, 60 V, 4.3 A, 0.055 ohm, SuperSOT, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC5612Copy
Manufacturer Standard Lead Time30 weeks
Newark Part No.58K1414
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 30 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.331 |
| 6000+ | $0.324 |
| 9000+ | $0.318 |
| 15000+ | $0.311 |
| 30000+ | $0.305 |
| 75000+ | $0.298 |
| 150000+ | $0.291 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$993.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC5612Copy
Manufacturer Standard Lead Time30 weeks
Newark Part No.58K1414
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id4.3A
Drain Source On State Resistance0.055ohm
On Resistance Rds(on)0.055ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.6W
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max2.2V
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC5612 is a N-channel MOSFET produced using PowerTrench® technology. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- High performance Trench technology for extremely low RDS (ON)
- 12.5nC typical low gate charge
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.055ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.6W
Gate Source Threshold Voltage Max
2.2V
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
4.3A
On Resistance Rds(on)
0.055ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SuperSOT
Power Dissipation
1.6W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate