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SI4532DY
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.9 A, 3.9 A, 0.053 ohm
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ManufacturerONSEMI
Manufacturer Part NoSI4532DY
Newark Part No.
Full Reel38C8610
Cut Tape67P3549
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 10 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 2500 | $0.911 | $2,277.50 |
| Total Price | $2,277.50 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 50+ | $0.911 |
Full Reel
| Quantity | Price |
|---|---|
| 1+ | $0.658 |
| 3000+ | $0.637 |
| 6000+ | $0.594 |
| 12000+ | $0.550 |
| 18000+ | $0.535 |
| 30000+ | $0.526 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoSI4532DY
Newark Part No.
Full Reel38C8610
Cut Tape67P3549
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id3.9A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.9A
Continuous Drain Current Id P Channel3.9A
Drain Source On State Resistance N Channel0.053ohm
Drain Source On State Resistance P Channel0.053ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI4532DY is a dual N/P-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where switching, low in-line power loss fast and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
Applications
Industrial, Power Management, Computers & Computer Peripherals
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
3.9A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
3.9A
Drain Source On State Resistance P Channel
0.053ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
3.9A
Drain Source On State Resistance N Channel
0.053ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Alternatives for SI4532DY
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Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate