Print Page
NTHD4502NT1G
Dual MOSFET, Dual N Channel, 30 V, 2.9 A, 0.085 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTHD4502NT1G
Newark Part No.
Re-Reel10N9579
Cut Tape10N9579
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTHD4502NT1G
Newark Part No.
Re-Reel10N9579
Cut Tape10N9579
Technical Datasheet
Channel TypeDual N Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id3.9A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel2.9A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.085ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleChipFET
No. of Pins8Pins
Power Dissipation N Channel1.13W
Power Dissipation P Channel-
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Technical Specifications
Channel Type
Dual N Channel
Continuous Drain Current Id
3.9A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
2.9A
Drain Source On State Resistance N Channel
0.085ohm
Transistor Case Style
ChipFET
Power Dissipation N Channel
1.13W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate