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FGY75N60SMD
IGBT Single Transistor, 150 A, 1.9 V, 750 W, 600 V, Power 247, 3 RoHS Compliant: Yes
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ManufacturerONSEMI
Manufacturer Part NoFGY75N60SMD
Newark Part No.88T3388
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFGY75N60SMD
Newark Part No.88T3388
Technical Datasheet
Continuous Collector Current150A
Collector Emitter Saturation Voltage1.9V
Power Dissipation750W
Collector Emitter Voltage Max600V
Transistor Case StylePower 247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
SVHCLead (19-Jan-2021)
Technical Specifications
Continuous Collector Current
150A
Power Dissipation
750W
Transistor Case Style
Power 247
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead (19-Jan-2021)
Collector Emitter Saturation Voltage
1.9V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate