Print Page
FDS6890A
Dual MOSFET, N Channel, 20 V, 7.5 A, 0.013 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDS6890A
Newark Part No.
Re-Reel78K5950
Cut Tape78K5950
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 7 week(s)
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1000+ | $0.860 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6890A
Newark Part No.
Re-Reel78K5950
Cut Tape78K5950
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id7.5A
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel7.5A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.013ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDS6890A is a dual N-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance.
- Fast switching speed
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±8V Gate to source voltage
- 7.5A Continuous drain current
- 20A Pulsed drain current
Applications
Industrial, Motor Drive & Control, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7.5A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
7.5A
Drain Source On State Resistance N Channel
0.013ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Alternatives for FDS6890A
1 Product Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate