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FDG8842CZ
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 750 mA, 750 mA, 0.25 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDG8842CZ
Newark Part No.52M3171
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG8842CZ
Newark Part No.52M3171
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id750mA
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel750mA
Continuous Drain Current Id P Channel750mA
Drain Source On State Resistance N Channel0.25ohm
Drain Source On State Resistance P Channel1.1ohm
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel380mW
Power Dissipation P Channel360mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The FDG8842CZ is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
- Very small package outline
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <lt/>1.5V)
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
750mA
Drain Source On State Resistance P Channel
1.1ohm
No. of Pins
6Pins
Power Dissipation P Channel
360mW
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
750mA
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
750mA
Drain Source On State Resistance N Channel
0.25ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
380mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (17-Jan-2023)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate