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MRFE6VP5150GNR1
RF FET Transistor, LDMOS, 139 V, 952 W, 1.8 MHz, 600 MHz, TO-270WBG
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ManufacturerNXP
Manufacturer Part NoMRFE6VP5150GNR1
Newark Part No.
Re-Reel85AC2003
Cut Tape85AC2003
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerNXP
Manufacturer Part NoMRFE6VP5150GNR1
Newark Part No.
Re-Reel85AC2003
Cut Tape85AC2003
Technical Datasheet
Drain Source Voltage Vds139V
Continuous Drain Current Id-
Power Dissipation952W
Operating Frequency Min1.8MHz
Power Dissipation Pd952W
Operating Frequency Max600MHz
Transistor Case StyleTO-270WBG
No. of Pins4Pins
RF Transistor CaseTO-270WB
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
SVHCNo SVHC (27-Jun-2024)
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Product Overview
- RF power LDMOS transistor
- Wide operating frequency range from 1.8 to 600MHz
- Unmatched input and output allowing wide frequency range utilization
- Integrated ESD protection circuitry
- Integrated stability enhancements
- Low thermal resistance
- High ruggedness N-channel enhancement mode lateral MOSFET
Technical Specifications
Drain Source Voltage Vds
139V
Power Dissipation
952W
Power Dissipation Pd
952W
Transistor Case Style
TO-270WBG
RF Transistor Case
TO-270WB
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
-
Operating Frequency Min
1.8MHz
Operating Frequency Max
600MHz
No. of Pins
4Pins
Operating Temperature Max
225°C
Transistor Mounting
Surface Mount
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate