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NX3008NBKS,115
Dual MOSFET, N Channel, 30 V, 30 V, 350 mA, 350 mA, 1 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoNX3008NBKS,115
Newark Part No.
Full Reel86AK7650
Re-Reel75T7842
Cut Tape75T7842
Your Part Number
44,938 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.648 | $3.24 |
| Total Price | $3.24 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.648 |
| 10+ | $0.422 |
| 25+ | $0.369 |
| 50+ | $0.315 |
| 100+ | $0.263 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.140 |
| 6000+ | $0.133 |
| 12000+ | $0.126 |
| 18000+ | $0.117 |
| 30000+ | $0.109 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNX3008NBKS,115
Newark Part No.
Full Reel86AK7650
Re-Reel75T7842
Cut Tape75T7842
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id350mA
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel350mA
Continuous Drain Current Id P Channel350mA
Drain Source On State Resistance N Channel1ohm
Drain Source On State Resistance P Channel1ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel445mW
Power Dissipation P Channel445mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NX3008NBKS is a dual N-channel enhancement mode Field-Effect Transistor (FET) in a surface mounted device (SMD) plastic package using Trench MOSFET technology. Suitable for high-speed line driver and low-side loadswitch.
- Very fast switching
- Low threshold voltage
- Up to 2kV ESD protection
- AEC-Q101 Qualified
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
350mA
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
350mA
Drain Source On State Resistance P Channel
1ohm
No. of Pins
6Pins
Power Dissipation P Channel
445mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
350mA
Drain Source On State Resistance N Channel
1ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
445mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability