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NGW75T65M3DFPQ
IGBT, 80 A, 1.49 V, 529 W, 650 V, TO-247, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoNGW75T65M3DFPQCopy
Manufacturer Standard Lead Time54 weeks
Newark Part No.
Re-Reel27AM4570RL
Cut Tape27AM4570
Your Part Number
450 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 1 | $12.480 | $12.48 |
| Total Price | $12.48 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $12.480 |
| 50+ | $8.770 |
| 100+ | $7.790 |
| 250+ | $6.800 |
| 500+ | $5.820 |
| 1000+ | $5.510 |
| 2500+ | $5.410 |
| 5000+ | $5.300 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNGW75T65M3DFPQCopy
Manufacturer Standard Lead Time54 weeks
Newark Part No.
Re-Reel27AM4570RL
Cut Tape27AM4570
Technical Datasheet
Product Overview
NGW75T65M3DFPQ is a 650V, 75A trench field-stop IGBT with full rated silicon diode in a 3 pin TO-247 package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5μs. This hard-switching 650V, 75A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and soft fast reverse recovery diode
- HV-H3TRB qualified
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate