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NGW75T65H3DFQ
IGBT, 80 A, 1.6 V, 600 W, 650 V, TO-247, 3 Pins
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900 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $15.100 |
| 10+ | $10.190 |
| 25+ | $9.300 |
| 50+ | $8.430 |
| 100+ | $7.540 |
| 250+ | $6.650 |
Price for:Each
Minimum: 1
Multiple: 1
$15.10
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNGW75T65H3DFQCopy
Newark Part No.14AM4753
Technical Datasheet
Continuous Collector Current80A
Collector Emitter Saturation Voltage1.6V
Power Dissipation600W
Collector Emitter Voltage Max650V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
SVHCLead
Product Overview
NGW75T65H3DFQ is a 650V, 75A trench field-stop IGBT with full rated silicon diode in a 3 pin TO-247 package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175°C with optimized IGBT turn-off losses. This hard-switching 650V, 75A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and fast reverse recovery diode
- HV-H3TRB qualified
Technical Specifications
Continuous Collector Current
80A
Power Dissipation
600W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.6V
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability