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DN3765K4-G
Power MOSFET, N Channel, 650 V, 300 mA, 8 ohm, TO-252AA, Surface Mount
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ManufacturerMICROCHIP
Manufacturer Part NoDN3765K4-G
Newark Part No.85X3190
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 54 week(s)
Packaging Options
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerMICROCHIP
Manufacturer Part NoDN3765K4-G
Newark Part No.85X3190
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id300mA
On Resistance Rds(on)8ohm
Drain Source On State Resistance8ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max-
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
8ohm
Transistor Case Style
TO-252AA
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
MSL 3 - 168 hours
Transistor Polarity
N Channel
Continuous Drain Current Id
300mA
Drain Source On State Resistance
8ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
0V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate