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IXTH02N250
Power MOSFET, N Channel, 2.5 kV, 200 mA, 450 ohm, TO-247, Through Hole
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240 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $16.930 |
| 5+ | $15.640 |
| 10+ | $14.340 |
| 25+ | $13.050 |
| 100+ | $12.100 |
| 500+ | $11.850 |
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Multiple: 1
$16.93
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTH02N250Copy
Newark Part No.03AH1443
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds2.5kV
Continuous Drain Current Id200mA
Drain Source On State Resistance450ohm
On Resistance Rds(on)450ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd83W
Power Dissipation83W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Product Overview
N-channel enhancement mode fast intrinsic diode suitable for use in high voltage power supplies, capacitor discharge applications, pulse circuits applications.
- High voltage power MOSFET
- Low package inductance
- Easy to mount
- Space savings
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
2.5kV
Drain Source On State Resistance
450ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation Pd
83W
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
200mA
On Resistance Rds(on)
450ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
83W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
