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ManufacturerLITTELFUSE
Manufacturer Part NoIXFH170N25X3
Newark Part No.03AH0544
Product RangeX3-Class HiPerFET Series
Your Part Number
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| Quantity | Price |
|---|---|
| 1+ | $20.570 |
| 5+ | $18.670 |
| 10+ | $16.780 |
| 25+ | $14.880 |
| 100+ | $12.990 |
| 500+ | $12.330 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFH170N25X3
Newark Part No.03AH0544
Product RangeX3-Class HiPerFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id170A
Drain Source On State Resistance0.0061ohm
On Resistance Rds(on)0.0061ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd890W
Power Dissipation890W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeX3-Class HiPerFET Series
MSL-
SVHCTo Be Advised
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic diode. It is suitable for use in DC-DC converters, switch-mode and resonant-mode power supplies, AC and DC motor drives, PFC circuits, robotics and servo controls applications.
- Low RDS(ON) and QG
- Low package inductance
- High power density
- Easy to mount
- Space savings
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.0061ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation Pd
890W
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
170A
On Resistance Rds(on)
0.0061ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
890W
Operating Temperature Max
150°C
Product Range
X3-Class HiPerFET Series
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
