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No Longer Available
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXGF32N170
Newark Part No.24M3030
Technical Datasheet
Continuous Collector Current44A
DC Collector Current44A
Collector Emitter Saturation Voltage Vce(on)3.5V
Collector Emitter Saturation Voltage3.5V
Power Dissipation200W
Power Dissipation Pd200W
Collector Emitter Voltage V(br)ceo1.7kV
Collector Emitter Voltage Max1.7kV
Transistor Case StyleISOPLUS i4-PAC
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXGF32N170 is a High Voltage IGBT for use with surface-mounting applications, capacitor discharge and pulse circuits.
- Electrically isolated tab
- High current handling capability
- Rugged NPT structure
- High power density
- UL94V-0 Flammability rating
Applications
Motor Drive & Control, Power Management
Technical Specifications
Continuous Collector Current
44A
Collector Emitter Saturation Voltage Vce(on)
3.5V
Power Dissipation
200W
Collector Emitter Voltage V(br)ceo
1.7kV
Transistor Case Style
ISOPLUS i4-PAC
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (17-Jan-2023)
DC Collector Current
44A
Collector Emitter Saturation Voltage
3.5V
Power Dissipation Pd
200W
Collector Emitter Voltage Max
1.7kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate