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IRLMS2002TRPBF
Power MOSFET, N Channel, 20 V, 6.5 A, 30 mohm, µSOIC, Surface Mount
4 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.930 | $4.65 |
| Total Price | $4.65 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $0.930 |
| 10+ | $0.911 |
| 15+ | $0.893 |
| 25+ | $0.874 |
| 50+ | $0.856 |
| 125+ | $0.837 |
| 250+ | $0.818 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLMS2002TRPBFCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel19K8375RL
Cut Tape19K8375
Product RangeHEXFET
Also Known AsSP001567202
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id6.5A
Drain Source On State Resistance30mohm
On Resistance Rds(on)0.03ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd2W
Gate Source Threshold Voltage Max1.2V
Power Dissipation2W
No. of Pins6Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRLMS2002TRPBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™ package with its customized lead-frame produces a HEXFET® power MOSFET. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS (ON) reduction enables a current-handling increase of nearly 300%.
- Ultra-low ON-resistance
Applications
Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
30mohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
6Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
6.5A
On Resistance Rds(on)
0.03ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2W
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate