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IRFH7085TRPBF
Power MOSFET, N Channel, 60 V, 100 A, 0.0032 ohm, QFN, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRFH7085TRPBF
Newark Part No.31Y2064
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $3.340 |
| 10+ | $2.030 |
| 25+ | $1.880 |
| 50+ | $1.720 |
| 100+ | $1.570 |
| 250+ | $1.450 |
| 500+ | $1.330 |
| 1000+ | $1.290 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFH7085TRPBF
Newark Part No.31Y2064
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id100A
Drain Source On State Resistance0.0032ohm
On Resistance Rds(on)0.0026ohm
Transistor Case StyleQFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation-
Power Dissipation Pd-
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
Single N-channel StrongIRFET™ power MOSFET. The device is ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters and DC-DC converters, half-bridge and full-bridge topologies, synchronous rectifier and resonant mode power supplies.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Product qualification according to JEDEC standard
- Softer body-diode compared to previous silicon generation
- Standard pinout allows for drop in replacement
- Industry standard qualification level
- High performance in low frequency applications
- Increased power density
- Provides designers flexibility in selecting the most optimal device for their application
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0032ohm
Transistor Case Style
QFN
Rds(on) Test Voltage
10V
Power Dissipation
-
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
0.0026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.7V
Power Dissipation Pd
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate