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IRFB7530PBF
Power MOSFET, N Channel, 60 V, 195 A, 0.002 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRFB7530PBFCopy |
| Manufacturer Standard Lead Time | 15 weeks |
| Newark Part No. | 43X7200 |
| Product Range | StrongIRFET HEXFET Series |
| Also Known As | SP001575524 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | $4.390 |
| 10+ | $3.060 |
| 25+ | $2.780 |
| 50+ | $2.490 |
| 100+ | $2.300 |
| 250+ | $2.140 |
| 500+ | $1.980 |
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Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRFB7530PBFCopy |
| Manufacturer Standard Lead Time | 15 weeks |
| Newark Part No. | 43X7200 |
| Product Range | StrongIRFET HEXFET Series |
| Also Known As | SP001575524 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Transistor Polarity | N Channel |
| Drain Source Voltage Vds | 60V |
| Continuous Drain Current Id | 195A |
| Drain Source On State Resistance | 0.002ohm |
| On Resistance Rds(on) | 0.00165ohm |
| Transistor Case Style | TO-220AB |
| Transistor Mounting | Through Hole |
| Power Dissipation Pd | 375W |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 3.7V |
| Power Dissipation | 375W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | StrongIRFET HEXFET Series |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The IRFB7530PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, synchronous rectifier applications, O-ring and redundant power switches, half-bridge and full-bridge topologies.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
Applications
Motor Drive & Control, Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 60V |
| Drain Source On State Resistance | 0.002ohm |
| Transistor Case Style | TO-220AB |
| Power Dissipation Pd | 375W |
| Gate Source Threshold Voltage Max | 3.7V |
| No. of Pins | 3Pins |
| Product Range | StrongIRFET HEXFET Series |
| MSL | - |
| Transistor Polarity | N Channel |
|---|---|
| Continuous Drain Current Id | 195A |
| On Resistance Rds(on) | 0.00165ohm |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 375W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (3)
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Product traceability |