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IRF7907TRPBF
Dual MOSFET, N Channel, 30 V, 30 V, 11 A, 11 A, 0.0098 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF7907TRPBFCopy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Full Reel86AK5390
Re-Reel13AC9211RL
Cut Tape13AC9211
Product RangeHEXFET Series
Your Part Number
9,344 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.960 | $1.96 |
| Total Price | $1.96 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.960 |
| 10+ | $1.290 |
| 25+ | $1.170 |
| 50+ | $1.040 |
| 100+ | $0.919 |
| 250+ | $0.839 |
Full Reel
| Quantity | Price |
|---|---|
| 4000+ | $0.400 |
| 8000+ | $0.380 |
| 16000+ | $0.366 |
| 24000+ | $0.361 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7907TRPBFCopy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Full Reel86AK5390
Re-Reel13AC9211RL
Cut Tape13AC9211
Product RangeHEXFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id11A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel11A
Continuous Drain Current Id P Channel11A
Drain Source On State Resistance N Channel0.0098ohm
Drain Source On State Resistance P Channel0.0098ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
Dual N-channel HEXFET® power MOSFET for POL converters in notebook computers, servers, graphics cards, game consoles and set-top box.
- Very low RDS(on) at 4.5V VGS
- Low gate charge
- Fully characterized avalanche voltage and current
- Improved body diode reverse recovery
- 100% tested for RG
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
11A
Drain Source On State Resistance P Channel
0.0098ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
11A
Continuous Drain Current Id N Channel
11A
Drain Source On State Resistance N Channel
0.0098ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate